The improvement of processors and memory performances is linked to their miniaturization based on engraving methods. In the 90's, first Pentium® processors were engraved in 800 nm.  In 2012, processors are commonly engraved in 45 nm and will soon 25 and 20nm. This trend leads to strong limitations in the use of conventional cleaning and drying solvents for the microelectronics devices. Capillary forces and stiction between patterns in the sub-30nm levels lead to the collapse of the different patterns. Supercritical CO₂ is very attractive for cleaning steps in the front end of wafer manufacturing.

Supercritical drying and critical point drying systems can also be used to dry MEMS after wet etching. They are used as successful anti-stiction tools for the MEMS manufacturing lines. 

SEPAREX already propose CPD tools for supercritical drying, but SEPAREX can also help you to developing industrial systems that shall meet the following requirements:

• Clean HP systems and HP items necessary in the construction of the cleaning systems,
• Develop and implementing the necessary automated opening / closing system for rapid handling of the wafer in the high pressure cleaning chamber,
• Optimizing the process with all environmental and economical aspects,
• Reducing processing time and additive consumption,
• Adapting recycling and waste management process to supercritical technology systems,
• Optimize ergonomics and reliability to reduce maintenance time and reduce equipment footprint for clean room installation. 

Moreover, many promising applications are also developed for deposition and functionalization of wafers in supercritical conditions using both high diffusivity solubility variations allowing deposition and functionalization. 

Please contact us to define the project together!